semiconductor group 1 nov-30-1995 bup 213 igbt preliminary data ? low forward voltage drop high switching speed low tail current latch-up free avalanche rated pin 1 pin 2 pin 3 g c e type v ce i c package ordering code bup 213 1200v 32a to-220 ab q67040-a4407 maximum ratings parameter symbol values unit collector-emitter voltage v ce 1200 v collector-gate voltage r ge = 20 k ? v cgr 1200 gate-emitter voltage v ge 20 dc collector current t c = 25 c t c = 90 c i c 20 32 a pulsed collector current, t p = 1 ms t c = 25 c t c = 90 c i cpuls 40 64 avalanche energy, single pulse i c = 15 a, v cc = 50 v, r ge = 25 ? l = 200 h, t j = 25 c e as 22 mj power dissipation t c = 25 c p tot 200 w chip or operating temperature t j -55 ... + 150 c storage temperature t stg -55 ... + 150 infineon
semiconductor group 2 nov-30-1995 bup 213 maximum ratings parameter symbol values unit din humidity category, din 40 040 - e - iec climatic category, din iec 68-1 - 55 / 150 / 56 thermal resistance igbt thermal resistance, chip case r thjc 0.63 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics gate threshold voltage v ge = v ce, i c = 0.35 ma v ge(th) 4.5 5.5 6.5 v collector-emitter saturation voltage v ge = 15 v, i c = 15 a, t j = 25 c v ge = 15 v, i c = 15 a, t j = 125 c v ge = 15 v, i c = 30 a, t j = 25 c v ge = 15 v, i c = 30 a, t j = 125 c v ce(sat) - - - - 4.3 3.4 3.3 2.7 - - 3.9 3.2 zero gate voltage collector current v ce = 1200 v, v ge = 0 v, t j = 25 c i ces - - 0.8 ma gate-emitter leakage current v ge = 25 v, v ce = 0 v i ges - - 100 na ac characteristics transconductance v ce = 20 v, i c = 15 a g fs - 12 - s input capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c iss - 1000 1350 pf output capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c oss - 150 225 reverse transfer capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c rss - 70 100 infineon
semiconductor group 3 nov-30-1995 bup 213 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. switching characteristics, inductive load at t j = 125 c turn-on delay time v cc = 600 v, v ge = 15 v, i c = 15 a r gon = 82 ? t d(on) - 70 100 ns rise time v cc = 600 v, v ge = 15 v, i c = 15 a r gon = 82 ? t r - 45 70 turn-off delay time v cc = 600 v, v ge = -15 v, i c = 15 a r goff = 82 ? t d(off) - 400 530 fall time v cc = 600 v, v ge = -15 v, i c = 15 a r goff = 82 ? t f - 70 95 infineon
semiconductor group 4 nov-30-1995 bup 213 power dissipation p tot = ? ( t c ) parameter: t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 160 180 w 220 p tot collector current i c = ? ( t c ) parameter: v ge 15 v , t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 4 8 12 16 20 24 a 32 i c safe operating area i c = ? ( v ce ) parameter: d = 0 , t c = 25c , t j 150 c -1 10 0 10 1 10 2 10 a i c 10 0 10 1 10 2 10 3 v v ce dc 10 ms 1 ms 100 s 10 s t p = 9.0 s transient thermal impedance igbt z th jc = ? ( t p ) parameter: d = t p / t -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 infineon
semiconductor group 5 nov-30-1995 bup 213 typ. output characteristics i c = f ( v ce ) parameter: t p = 80 s, t j = 25 c 0 1 2 3 v 5 v ce 0 2 4 6 8 10 12 14 16 18 20 22 24 a 30 i c 17v 15v 13v 11v 9v 7v typ. output characteristics i c = f ( v ce ) parameter: t p = 80 s, t j = 125 c 0 1 2 3 v 5 v ce 0 2 4 6 8 10 12 14 16 18 20 22 24 a 30 i c 17v 15v 13v 11v 9v 7v typ. transfer characteristics i c = f ( v ge ) parameter: t p = 80 s, v ce = 20 v 0 2 4 6 8 10 v 14 v ge 0 2 4 6 8 10 12 14 16 18 20 22 24 a 30 i c infineon
semiconductor group 6 nov-30-1995 bup 213 typ. switching time t = f ( r g ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, i c = 15 a 0 50 100 150 200 ? 300 r g 1 10 2 10 3 10 ns t tdon tr tdoff tf typ. switching time i = f ( i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 82 ? 0 5 10 15 20 25 30 a 40 i c 1 10 2 10 3 10 ns t tdon tr tdoff tf typ. switching losses e = f ( i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 82 ? 0 5 10 15 20 25 30 a 40 i c 0 1 2 3 4 5 6 7 8 mws 10 e eon eoff typ. switching losses e = f ( r g ) , inductive load , t j = 125c par.: v ce = 600v, v ge = 15 v, i c = 15 a 0 50 100 150 200 ? 300 r g 0 1 2 3 4 5 6 7 8 mws 10 e eon eoff infineon
semiconductor group 7 nov-30-1995 bup 213 typ. gate charge v ge = ? ( q gate ) parameter: i c puls = 15 a 0 10 20 30 40 50 60 70 80 100 q gate 0 2 4 6 8 10 12 14 16 v 20 v ge 800 v 600 v typ. capacitances c = f ( v ce ) parameter: v ge = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ce -2 10 -1 10 0 10 1 10 nf c ciss coss crss short circuit safe operating area i csc = f ( v ce ) , t j = 150c parameter: v ge = 15 v, t sc 10 s, l < 25 nh 0 200 400 600 800 1000 1200 v 1600 v ce 0 2 4 6 10 i csc / i c(90c) reverse biased safe operating area i cpuls = f (v ce ) , t j = 150c parameter: v ge = 15 v 0 200 400 600 800 1000 1200 v 1600 v ce 0.0 0.5 1.0 1.5 2.5 i cpuls / i c infineon
semiconductor group 8 nov-30-1995 bup 213 package outlines dimensions in mm weight: infineon
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